advanced power n-channel insulated gate electronics corp. bipolar transistor features v ces high speed switching i c low saturation voltage v ce(sat) =3.0v@i c =30a industry standard to-3p package absolute maximum ratings , 1/8" from case for 5 seconds . notes: 1.repetitive rating : pulse width limited by max . junction temperature . thermal data symbol rthj-c rthj-a electrical characteristics@t j =25 o c(unless otherwise specified) symbol min. typ. max. units bv ces 1000 - - v i ges - - 500 na i ces --1ma v ce(sat) - 3 3.6 v - 3.8 - v v ge(th) 3 4.4 7 v q g -5588 nc q ge -12- nc q gc -27- nc t d(on) -30- ns t r -40- ns t d(off) - 105 - ns t f - 290 440 ns e on - 1.2 - mj e off - 1.7 - mj c ies - 1320 2110 pf c oes - 105 - pf c res -9- pf data and specifications subject to change without notice v cc =500v, i c =30a, v ge =15v, r g =5 ? , inductive load rise time turn-off delay time fall time turn-on switching loss turn-off switching loss 200828071-1/3 rohs-compliant product operating junction temperature range gate-emitter charge gate threshold voltage collector-emitter saturation voltage collector-emitter leakage current v ge =15v, i c =60a t l v ce =1000v, v ge =0v v ge =15v thermal resistance junction-ambient rohs compliant output capacitance input capacitance p d @t c =25 t j i cm v ce =30v parameter w v cc =500v maximum power dissipation test conditions storage temperature range 208 units /w f=1.0mhz -55 to 150 -55 to 150 v ge =15v, i c =30a v ce =v ge , i c =1ma i c =30a v ge =30v, v ce =0v 40 v ge =0v v ge =0v, i c =250ua pulsed collector current 1 v ge i c @t c =100 i c @t c =25 continuous collector current gate-emitter voltage continuous collector current a v 120 a 30 30 60 a ap30g100w symbol v ces 1000v 30a rating collector-emitter voltage units v 1000 /w thermal resistance junction-case parameter value 0.6 reverse transfer capacitance t stg gate-collector charge total gate charge parameter gate-to-emitter leakage current turn-on delay time collect-to-emitter breakdown voltage maximum lead temp. for soldering purposes 300 g c e to-3p g c e
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. typical saturation voltage fig 4. typical collector- emitter voltage characteristics v.s. junction temperature fig 5. gate threshold voltage fig 6. typical capacitance characterisitics v.s. junction temperature 2/3 ap30g100w 0 40 80 120 160 036912 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v t c =25 o c 0 20 40 60 80 100 036912 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v 1 2 3 4 5 6 0 40 80 120 160 junction temperature ( o c) v ce(sat) , saturation voltage(v) i c =60a i c =30a v ge =15v 0.5 0.8 1.1 1.4 -50 0 50 100 150 junction temperature ( o c ) normalized v ge(th) (v) t c =150 o c 0 20 40 60 80 100 120 140 160 024681012 v ce , collector-emitter voltage (v) i c , collector current(a) v ge =15v t c =25 : 1 100 10000 1 10 100 v ce , collector-emitter voltage (v) capacitance (pf) f =1.0mh z c ies c oes c res t c =150 :
fig 7. turn-off soa fig 8. effective transient thermal impedance fig 9. saturation voltage vs. v ge fig 10. saturation voltage vs. v ge fig11. power dissipation vs. junction fig 12. gate charge characterisitics temperature 3/3 ap30g100w 0 4 8 12 16 20 0 20406080 q g , gate charge (nc) v ge , gate -emitter voltage (v) i c =30a v cc =200v v cc =300v v cc =500v 0 5 10 15 20 048121620 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =60a 30 a 15 a t c =25 o c 0 5 10 15 20 0 4 8 12 16 20 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =60a 30 a 15 a t c =150 o c 1 10 100 1000 ? ?? ??? ???? ????? v ce , collector-emitter voltage(v) i c , peak collector current(a) safe operating area v ge =15v t c =125 o c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 50 100 150 200 250 0 50 100 150 200 junction temperature ( : ) power dissipation (w)
package outline : to-3p millimeters min nom max a 4.50 4.80 5.10 b 0.90 1.00 1.30 b1 1.80 2.50 3.20 b2 1.30 -- 2.30 c 0.40 0.60 0.90 c1 1.40 -- 2.20 d 19.70 20.00 20.30 d1 14.70 15.00 15.30 e 15.30 -- 16.10 b2 e 4.45 5.45 6.45 l 17.50 -- 20.50 3.00 3.20 3.40 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-3p symbol s advanced power electronics corp. package part number 30g100w ywwsss logo c1 e b b1 c l d1 a d e date code (ywwsss) y last digit of the year ww week sss sequence
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